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| MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating Suitable as a low voltage high current driver SOT-23 A C B C Dim A B C D E G K J L M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data * * * * * * * * Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K6D Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) E B TOP VIEW E D G H H J K L M a C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT123S 45 18 5 1 300 417 -55 to +150 Unit V V V A mW C/W C Characteristic Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30292 Rev. 3 - 2 1 of 3 MMBT123S Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Cobo fT Min 45 18 5 3/4 3/4 150 3/4 3/4 100 Max 3/4 3/4 3/4 1 1 800 0.5 8 3/4 Unit V V V mA mA 3/4 V pF MHz Test Condition IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA VCB = 10V, f = 1.0MHz, IE = 0 VCB = 10V, IE = 50mA, f = 100MHz NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Ordering Information (Note 3) Device MMBT123S-7 Notes: 2. 3. Packaging SOT-23 Shipping 3000/Tape & Reel Short duration pulse test used to minimize self-heating effect. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6D K6D = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 March 3 2003 P Apr 4 2004 R May 5 Jun 6 2005 S Jul 7 2006 T Aug 8 Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30292 Rev. 3 - 2 YM 2 of 3 MMBT123S 1000 350 NEW PRODUCT PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 hFE, DC CURRENT GAIN 100 0 25 50 75 100 125 150 175 200 1 0.0001 VCE = 1.0V .001 .01 .1 1 10 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current 100 f = 1MHz 1000 COBO, OUTPUT CAPACITANCE (pF) VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 1 10 100 100 10 10 1 0.1 1 0.0001 .001 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current 10 DS30292 Rev. 3 - 2 3 of 3 MMBT123S |
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